Navitas Semiconductor has introduced its latest offerings, including a significant 10 kW DC-DC power platform aimed at AI data centers. The launch also features the 5th-generation GeneSiC silicon carbide Trench-Assisted Planar MOSFET platform, which is designed to meet the rising efficiency and power density requirements for high-voltage applications.
As energy consumption grows, the demand for advanced power semiconductor solutions has intensified. Both products are intended to enhance energy conversion efficiency, particularly within data centers and industrial electrification, which are critical sectors experiencing increased power demands. The new MOSFET platform boasts lower switching losses and higher operational frequencies, crucial for optimizing compute capabilities.
Navitas is positioning itself as a strong competitor in the semiconductor market, going up against major companies such as Infineon and STMicroelectronics. The successful implementation of these technologies may improve its relationships with clients in the data center and infrastructure sectors. However, the company has recognized potential challenges in securing long-term supply agreements as it navigates these emerging markets.